Over the past decades, ferroelectric photovoltaic (FE-PV) systems, which use a homogenous ferroelectric material as a light-absorbing layer, have been studied using ferroelectric oxides. The PV activity of materials can be enhanced by adjusting the bandgap of materials, and it would have a large effect on the ferroelectric complex oxides. This phenomenon in epitaxial thin films of ferroelectric complex oxide, Bi3.25La0.75Ti3O12 (BLT), Fe- and Co-doped films were observed. Compared with undoped BLT, Co-(BLCT) doping and Fe and Co combined (BLFCT) doping resulted in the gradual reduction in the bandgap and efficient visible light absorption. The reduction in the bandgap to 11.4% and 18.1% smaller than the experimentally measured Eg of the bismuth titanate-based film using a simple Fe- and Co-doping method was performed, while maintaining ferroelectricity by analyzing the BLCT and BLFCT films based on polarization loops, and the temperature range of the out-of-plane lattice parameters and the photocurrent density of the BLFCT film was 32.2 times higher than that of the BLT film, which was caused by the decrease in the bandgap. This simple doping technique can be used to tune additional wide-bandgap complex oxides so that they can be used in photovoltaic energy conversion or optoelectronic devices.
Driven by the growing demand for renewable and clean energy, the photovoltaic effect of various solar cells and materials was investigated for the conversion of light energy into electricity. We modified the Bi3.25La0.75Ti3O12 (BLT) and Co-doped BLT (Co–BLT) composites with Fe and Co-doped BLT (FeCo–BLT) films to narrow the bandgap and increase visible light absorption, thereby improving the efficiency of the photovoltaic reaction. In this study, BLT and Co–BLT thin films were fabricated by off-axis sputtering and then modified with FeCo–BLT thin films to produce dual-ferroelectric, thin-film composite materials that improved the photovoltaic power generation performance. Photoelectric test results showed that the modified double-ferroelectric, thin-film composites had superior optoelectronic properties. The current density was significantly enhanced by modifying the BLT films with doped Fe and Co. Therefore, this modification improved the efficiency of ferroelectric thin-film photovoltaic reactions.
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