Previous studies of quantum chaotic scattering established a connection between classical dynamics and quantum transport properties: Integrable or mixed classical dynamics can lead to sharp conductance fluctuations but chaos is capable of smoothing out the conductance variations. Relativistic quantum transport through single-layer graphene systems, for which the quasiparticles are massless Dirac fermions, exhibits, due to scarring, this classical-quantum correspondence, but sharp conductance fluctuations persist to a certain extent even when the classical system is fully chaotic. There is an open issue regarding the effect of finite mass on relativistic quantum transport. To address this issue, we study quantum transport in chaotic bilayer graphene quantum dots for which the quasiparticles have a finite mass. An interesting phenomenon is that, when traveling along the classical ballistic orbit, the quasiparticle tends to hop back and forth between the two layers, exhibiting a Zitterbewegung-like effect. We find signatures of abrupt conductance variations, indicating that the mass has little effect on relativistic quantum transport. In solid-state electronic devices based on Dirac materials, sharp conductance fluctuations are thus expected, regardless of whether the quasiparticle is massless or massive and whether there is chaos in the classical limit.
Graphene-based mechanical resonators have attracted much attention due to their superior elastic properties and extremely low mass density. We investigate the effects of mechanical vibrations on electronic transport through graphene quantum dots, under the physically reasonable assumption that the time scale associated with electronic transport is much shorter than that with mechanical vibration so that, at any given time, an electron "sees" a static but deformed graphene sheet. We find that, besides periodic oscillation in the quantum transmission at the same frequency as that of mechanical vibrations, structures at finer scales can emerge as an intermediate state, which may lead to spurious higher-frequency components in the current through the device.
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