We report field electron emission investigations on pulsed laser-deposited molybdenum disulfide (MoS2) thin films on W-tip and Si substrates. In both cases, under the chosen growth conditions, the dry process of pulsed laser deposition (PLD) is seen to render a dense nanostructured morphology of MoS2, which is important for local electric field enhancement in field emission application. In the case of the MoS2 film on silicon (Si), the turn-on field required to draw an emission current density of 10 μA/cm(2) is found to be 2.8 V/μm. Interestingly, the MoS2 film on a tungsten (W) tip emitter delivers a large emission current density of ∼30 mA/cm(2) at a relatively lower applied voltage of ∼3.8 kV. Thus, the PLD-MoS2 can be utilized for various field emission-based applications. We also report our results of photodiode-like behavior in (n- and p- type) Si/PLD-MoS2 heterostructures. Finally we show that MoS2 films deposited on flexible kapton substrate show a good photoresponse and recovery. Our investigations thus hold great promise for the development of PLD MoS2 films in application domains such as field emitters and heterostructures for novel nanoelectronic devices.

Electron emission properties of electrodeposited ZnO nanosheet arrays grown on Indium tin oxide coated glass substrates have been studied. Influence of oxygen vacancies on electronic structures and field emission properties of ZnO nanosheets are investigated using density functional theory. The oxygen vacancies produce unshared d electrons which form an impurity energy state; this causes shifting of Fermi level towards the vacuum, and so the barrier energy for electron extraction reduces. The ZnO nanosheet arrays exhibit a low turn-on field of 2.4 V/μm at 0.1 μA/cm2 and current density of 50.1 μA/cm2 at an applied field of 6.4 V/μm with field enhancement factor, β = 5812 and good field emission current stability. The nanosheet arrays grown by a facile electrodeposition process have great potential as robust high performance vertical structure electron emitters for future flat panel displays and vacuum electronic device applications.

We report first-principles DFT calculations of the single-layer VS 2 work function, the experimental synthesis of flower-like few-layer-thick VS 2 nanosheets by a simple one-step hydrothermal method, and the investigation of their field emission properties. The turn-on field required to draw emission current densities of 1 and 10 μA/cm 2 were 4 and 5.01 V/μm, respectively. The observed turn-on field values are attributed

Spinel ZnCo2O4 microflowers were synthesized by a facile route and their field emission properties were studied in detail. They showed intriguing Field emission performance in terms of good field-enhancement factor and stability.

We evidence field-electron emission (FE) studies on the large-area array of one-dimensional (1D) brookite (b) TiO 2 nanorods. The pure 1D b-TiO 2 nanorods of 10 nm width and 760 nm long were synthesized on Si substrate utilizing hot-filament metal vapor deposition technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) analysis evidenced the b-TiO 2 nanorods to be composed of orthorhombic crystals in brookite (b) phase. X-ray photoemission spectroscopy (XPS) revealed the formation of pure stoichiometric (i.e. 1 : 1.98) 1D TiO 2 nanorods. The values of turn-on field, required to draw current density of 10 mA cm À2 , was observed 3.9 V mm À1 for pristine 1D b-TiO 2 nanorods emitters, which were found significantly lower than doped/undoped 1D TiO 2 nanostructures (i.e. nanotubes, nanowires, nanorods) based field emitters. The enhanced FE behavior of the TiO 2 /Si emitter can be attributed to modulation of electronic properties due to the high aspect ratio of vertically aligned TiO 2 nanorods. Furthermore, the orthodox emission situation of pristine TiO 2 /Si emitters exhibit good emission stability and reveal their potentials as promising FE material.