InAs nanowires (NWs) is a key material for high-speed electronics, near-and mid-infrared light emission and detection applications. Much effort has been devoted to the fabrication of InAs NWs and molecular beam epitaxy (MBE) evolved as a powerful method to grow semiconductor nanowires with several interesting features, but it was rarely reported. We present kinds of growths (metal-catalyzed growth, self-catalyzed growth, self-induced free-standing growth, self-induced position-controlled growth, self-assisted nucleation growth etc.) of InAs NWs by MBE, and discuss how to control growth of uniform-structure InAs NWs on homogeneous or heterogeneous substrates, which can provide the reference for the manufacture of low dimensional structure.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.