are built from novel hexadecahedral {Ln 6 W 8 O 28 } heterometallic cage-shaped clusters. Intriguingly, every tetrameric {[Ln 3 (H 2 O) 3 (α-SiW 11 O 39 ) 2 ] 2 } 14− cage-cluster is linked with another eight tetrameric cage-clusters by Ln 3+ cations, leading to a novel 3D inorganic porous framework, which exhibits good thermal and chemical stability, excellent water vapor adsorption capacity, and moderate proton conductive properties. Furthermore, the solid state luminescence spectra demonstrate that 1-Sm, 1-Eu, 1-Tb, and 1-Dy display the lanthanide characteristic emission bands. The temperature-dependent magnetic susceptibility indicates that there are antiferromagnetic interactions in 1-Tb and 1-Dy.
The assembly of heterometallic cluster
substituted polyoxometalates
(POMs) remains a great challenge for inorganic synthetic chemistry
up to now. Herein, a series of 5p–4f heterometallic cluster
substituted POMs were successfully isolated by a facile one-step hydrothermal
reaction method, namely H17(H2en)3[SbIII
9SbVLn3O14(H2O)3][(SbW9O33)3(PW9O34)]·28H2O(1-Ln, Ln = Ce, Sm, Eu, Gd, Tb, Dy) (en = ethylenediamine).
Interestingly, by replacing en with imidazole, another series of 5p–4f
heterometallic cluster substituted POMs H13(HIm)4K2Na4(H2O)9[SbIII
9SbVLn3O14(H2O)3][(SbW9O33)3(PW9O34)]·26H2O (2-Ln,
Ln = Sm, Eu, Gd, Tb, Dy, Im = imidazole) were obtained. Structural
analyses indicate that both 1-Ln and 2-Ln are made up of an unprecedented 5p–4f heterometallic {Sb10Ln3O14(H2O)3}
cluster stabilized simultaneously by mixed trilacunary heteropolyanions
including {A-α-PW9O34} and {B-α-SbW9O33}. Impedance measurements indicate that both
compounds exhibit different proton conduction properties, and the
conductivity of 2 can reach up to 1.64 × 10–2 S cm–1 at 85 °C under 98%
relative humidity. Moreover, the fluorescence emission behaviors of
both compounds have been studied.
Two novel inorganic-organic hybrid 3-D TM-Ln incorporated POM-based frameworks, H2[Cu2OL3(H2O)2][Ce(L)(H2O)3(PW11O39)]·17H2O (1) and H4[CuL3]2[Ln(H2O)3(PW11O39)]2·28H2O (2), (L = 4,4'-bipyridine) were hydrothermally synthesized at different temperatures. Structural analysis reveals that both compounds are...
This study reported a series of cube-shaped polyoxoniobates, {MCu12O8)(Cu12XmOn)(Nb7(OH)O21)8} [M = Nb(1, 2), Ln3+(3), X = I(1, m = 3, n = 3; 2, m = 5, n = 1), Br(3, m = 5, n = 1)]. As the first octahedral Cu12XmOn cluster incorporated polyoxoniobate, the cube-shaped three-shell structure of {MCu12O8)(Cu12XmOn)(Nb7(OH)O21)8} polyanion contains a {MCu12O8} body-centered cuboctahedron, a {Cu12XmOn} octahedron and a {Cu12(Nb7(OH)O21)8} cube. Compounds 1, 2, 3 show effective catalytic activities for the hydrolytic decomposition of chemical warefare agent simulants.
Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence (PL) band in a the region of 650-750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Si=O bonds or Si-O-Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si-O-Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.
We report fabrication of low-dimensional structures in air by a pulsed laser on SiGe alloy samples in which different oxide structures are formed by laser irradiation and annealing treatment. The micro-structures on SiGe are more complex than those on Si. A series of photoluminescence (PL) emission is observed due to various trap states at the SiGe-SiO2 interface formed under different preparing conditions. The peak centre of PL emission exhibits red-shift from Si to SiGe because of narrower gap. A model for explaining the PL emission is proposed in which the trap states of the interface between some oxide and SiGe play an important role.
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