The influence of post-annealing (PA) on the resistivity of 55-nm VO x film (∼1.2 · cm) is investigated in this letter. For the first time, it is demonstrated that PA can effectively lower the film resistivity but with a constant temperature coefficient of resistance (TCR) by enhancing the formation of embedded VO 2 nanocrystals (NCs), while keeping the VO x film composition unchanged. A model based on charge hopping between VO 2 NCs is proposed to illustrate the relationship between the temperature-dependent resistivity and the constant TCR.Index Terms-Vanadium oxide, nanocrystal, temperature coefficient of resistance, post-annealing.
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