To achieve good step coverage for submicron contacts/vias, many approaches have been taken in recent years in VLSI production. While CVD tungsten plug is widely implemented in US for submicron manufacturing, planarized aluminum plug (i.e. high temperature aluminum deposition) is slowly emerging for its process simplicity and low wafer cost. In this paper, we will present the plasma etching studies on the high-temperature-deposited AISiCu (or hot aluminum) and its application in manufacturing of ULSICs' with O.6j.tm design rules. The etchability and manufacturability of this high temperature-deposited A1SiCu have been proven and demonstrated with submicron metal lines. Various aspects of the hot aluminum etching including profile control, residue, microloading and resist selectivity are discussed in detail.
The goal of this study is to characterize the process latitude of an attenuated phase sgift mask on contact hole printing.The parameters chosen to examine the effect on process windows are numerical aperture (NA) and partial coherence (sigma). In addition to these, another important element we would like to determine from this test is the appropriate mask to wafer CD bias. The range of numerical aperture is from 0.5 to 0.63 and the range of partial coherence is from 0.32 to 0.67. Within the ranges of study, it is found that the DOF increases with decreasing partial coherence for iso contacts, but decreases with decreasing partial coherence for dense ones. DOF increases with decreasing numerical aperture for both iso and dense contact holes as expected. The best DOF of 2. 1 micron was obtained with 0.5 NA and 0.4 partial coherence.In general, the required energy to open contact holes increases with decreasing numerical aperture, while the impact of partial coherence on best dosage is not as predominant as NA does. The effect of pre-treatment delays the side lobe formation for iso contact holes while seems to have no effect on dense ones.
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