Single-electron charging in an individual InAs quantum dot was observed by electrostatic force measurements with an atomic-force microscope (AFM). The resonant frequency shift and the dissipated energy of an oscillating AFM cantilever were measured as a function of the tip-back electrode voltage, and the resulting spectra show distinct jumps when the tip was positioned above the dot. The observed jumps in the frequency shift, with corresponding peaks in dissipation, are attributed to a single-electron tunneling between the dot and the back electrode governed by the Coulomb blockade effect, and are consistent with a model based on the free energy of the system. The observed phenomenon may be regarded as the "force version" of the Coulomb blockade effect.
We demonstrate a method to fabricate a high-aspect ratio metal tip attached to microfabricated cantilevers with controlled angle, length, and radius, for use in electrostatic force microscopy. A metal wire, after gluing it into a guiding slot that is cut into the cantilever, is shaped into a long, thin tip using a focused ion beam. The high-aspect ratio results in considerable reduction of the capacitive force between tip body and sample when compared to a metal coated pyramidal tip.
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