This paper presents the Butterworth-van Dyke model and quantitative comparison that explore the design space of lead zirconate titanate-only (PZT) and PZT on 3-, 5-, and 10-μm single-crystal silicon (SCS) high-overtone width-extensional mode (WEM) resonators with identical lateral dimensions for incorporation into radio frequency microelectromechanical systems (RF MEMS) filters and oscillators. A novel fabrication technique was developed to fabricate the resonators with and without a silicon carrier layer using the same mask set on the same wafer. The air-bridge metal routings were implemented to carry electrical signals while avoiding large capacitances from the bond-pads. We theoretically derived and experimentally measured the correlation of motional impedance (RX), quality factor (Q), and resonance frequency (f) with the resonators' silicon layer thickness (tSi) up to frequencies of operation above 1 GHz.
This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept point (IIP3) of +43.7 dBm versus +23.3 dBm]. In contrast, the PZT-only resonator demonstrated much wider frequency tuning range (5.1% versus 0.2%).
This paper provides a quantitative comparison and explores the design space of PZT-only (Lead Zirconium Titanate) and PZT-on-Silicon length-extensional mode resonators for incorporation into RF MEMS filters and oscillators. We experimentally measured the correlation of motional impedance (R X ) and quality factor (Q) with the resonators' silicon layer thickness (t Si ). For identical lateral dimensions and PZT-layer thickness (t PZT ), the PZT-on-Silicon resonator has higher resonant frequency (dominated by silicon), higher Q (5,100 vs. 140) and lower motional impedance (51 Ω vs. 205 Ω). However, PZT-only resonator demonstrated much wider frequency tuning range (5.1% vs. 0.2%).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.