In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) Kevwordsusing lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells.
Al NanostructuresTo reduce the dark current due to direct conduction in the wells, we apply an electric field between the A3. Molecular beam epitaxy quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the A3. Quantum wells normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first Bl. Arsenides analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal B2. Semiconducting III-V materials U p ( 0 -[ 50 i< when it is processed in conventional vertical detector. However, it is possible to observe room B3. Infrared devices temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found.
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