Monitoring a magnetic state using thermal or electrical activation is mandatory for the development of new magnetic devices, for instance in heat or electrically assisted magnetic recording or room-temperature memory resistor. Compounds such as FeRh, which undergoes a magnetic transition from an antiferromagnetic state to a ferromagnetic state around 100 °C, are thus highly desirable. However, the mechanisms involved in the transition are still under debate. Here we use in situ heating and cooling electron holography to quantitatively map at the nanometre scale the magnetization of a cross-sectional FeRh thin film through the antiferromagnetic–ferromagnetic transition. Our results provide a direct observation of an inhomogeneous spatial distribution of the transition temperature along the growth direction. Most interestingly, a regular spacing of the ferromagnetic domains nucleated upon monitoring of the transition is also observed. Beyond these findings on the fundamental transition mechanisms, our work also brings insights for in operando analysis of magnetic devices.
Integration of epitaxial complex ferroelectric oxides such as BaTiO 3 on semiconductor substrates depends on the ability to finely control their structure and properties, which are strongly correlated. The epitaxial growth of thin BaTiO 3 films with high interfacial quality still remains scarcely investigated on semiconductors; a systematic investigation of processing conditions is missing although they determine the cationic composition, the oxygen content, and the microstructure, which, in turn, play a major role on the ferroelectric properties. We report here the study of various relevant deposition parameters in molecular beam epitaxy for the growth of epitaxial tetragonal BaTiO 3 thin films on silicon substrates. The films were grown using a 4 nm-thick epitaxial SrTiO 3 buffer layer. We show that the tetragonality of the BaTiO 3 films, the crystalline domain orientations, and SiO 2 interfacial layer regrowth strongly depend on the oxygen partial pressure and temperature during the growth and on the post-deposition anneal. The ferroelectricity of the films, probed using piezoresponse force microscopy, is obtained in controlled temperature and oxygen pressure conditions with a polarization perpendicular to the surface. V
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