We derive an analytical formulation of the Raman-induced frequency shift experienced by a fundamental soliton. By including propagation losses, self-steepening, and dispersion slope, the resulting formulation is a high-order (HO) extension of the well-known Gordon’s formula for soliton self-frequency shift (SSFS). The HO-SSFS formula agrees closely with numerical results of the generalized nonlinear Schrödinger equation, but without the computational complexity and required computation time. The HO-SSFS formula is a useful tool for the design and validation of wavelength conversion systems and supercontinuum generation systems.

Alloys of sulphur, selenium and tellurium, often referred to as chalcogenide semiconductors offer a highly versatile, compositionally-controllable material platform for a variety of passive and active photonic applications. They are optically nonlinear, photoconductive materials with wide transmission windows that present various high- and low-index dielectric, low-epsilon and plasmonic properties across ultra-violet, visible and infrared frequencies, in addition to an ultra-fast, non-volatile, electrically-/optically-induced switching capability between phase states with markedly different electromagnetic properties. This roadmap collection presents an in-depth account of the critical role that chalcogenide semiconductors play within various traditional and emerging photonic technology platforms. The potential of this field going forward is demonstrated by presenting context and outlook on selected socioeconomically important research streams utilizing chalcogenide semiconductors. To this end, this roadmap encompasses selected topics that range from systematic design of material properties and switching kinetics to device level nanostructuring and integration within various photonic system architectures.

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We predict analytically the energy conversion efficiency from the fission of a high-order soliton into fundamental solitons. Taking inter-pulse Raman gain into account, this prediction adds precision to the inverse scattering method prediction.