The Trilinos Project is an effort to facilitate the design, development, integration and ongoing support of mathematical software libraries within an object-oriented framework for the solution of large-scale, complex multi-physics engineering and scientific problems. Trilinos addresses two fundamental issues of developing software for these problems: (i) Providing a streamlined process and set of tools for development of new algorithmic implementations and (ii) promoting interoperability of independently developed software. Trilinos uses a two-level software structure designed around collections of packages. A Trilinos package is an integral unit usually developed by a small team of experts in a particular algorithms area such as algebraic preconditioners, nonlinear solvers, etc. Packages exist underneath the Trilinos top level, which provides a common look-and-feel, including configuration, documentation, licensing, and bug-tracking.Here we present the overall Trilinos design, describing our use of abstract interfaces and default concrete implementations. We discuss the services that Trilinos provides to a prospective package and how these services are used by various packages. We also illustrate how packages can be combined to rapidly develop new algorithms. Finally, we discuss how Trilinos facilitates highquality software engineering practices that are increasingly required from simulation software.

Inductively coupled plasmas (ICPs) are currently being investigated as high density (> lo"-10" cmB3), low pressure (< l-20 mTorr) sources for semiconductor etching and deposition. We have developed a two-dimensional (Y,z) hybrid model for ICP sources and have used the model to investigate Ar/C!Fd02 mixtures for etching applications. The simulation consists of electromagnetic, electron Monte Carlo, and hydrodynamic modules with an "off-line" plasma chemistry Monte Carlo simulation. The model produces the temporally and spatially dependent magnetic and electric fields (both inductively and capacitively coupled), plasma densities, and the energy resolved flux of ions and radicals to the substrate. We discuss-results for densities, power deposition, and ion energies to the substrate as a function of position.

Articles you may be interested inAtomic-scale cellular model and profile simulation of poly-Si gate etching in high-density chlorine-based plasmas: Effects of passivation layer formation on evolution of feature profiles Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation J. Appl. Phys. 94, 6311 (2003); 10.1063/1.1621713Effect of neutral transport on the etch product lifecycle during plasma etching of silicon in chlorine gas

Inductively coupled plasma ͑ICP͒ reactors are being developed for low gas pressure ͑Ͻ10s mTorr͒ and high plasma density ͑[e]Ͼ10 11 cm Ϫ3 ͒ microelectronics fabrication. In these reactors, the plasma is generated by the inductively coupled electric field while an additional radio frequency ͑rf͒ bias is applied to the substrate. One of the goals of these systems is to independently control the magnitude of the ion flux by the inductively coupled power deposition, and the acceleration of ions into the substrate by the rf bias. In high plasma density reactors the width of the sheath above the wafer may be sufficiently thin that ions are able to traverse it in approximately 1 rf cycle, even at 13.56 MHz. As a consequence, the ion energy distribution ͑IED͒ may have a shape typically associated with lower frequency operation in conventional reactive ion etching tools. In this paper, we present results from a computer model for the IED incident on the wafer in ICP etching reactors. We find that in the parameter space of interest, the shape of the IED depends both on the amplitude of the rf bias and on the ICP power. The former quantity determines the average energy of the IED. The latter quantity controls the width of the sheath, the transit time of ions across the sheath and hence the width of the IED. In general, high ICP powers ͑thinner sheaths͒ produce wider IEDs.

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