Invited s-D-5 domain greatly exceeds the available thermal energy lnd the domain is stable. This mechanism leads directly to the advantages these materials have when used as a memory element. We divide the advantages into three categories; circuit performance and design issues, reliability issues qnd manufacturing issues. Ferroelectric circuits are fast, dense, and can operate at low voltages. The speed of the switching has been calculated2 to be < 0.5 ns. Our measurements which are limited by our current circuits show it to be faster than 3 ns. The memory cell can be scaled down in size as it is similar to a DRAM cell consisting of one transistor and one capacitor which can be stacked above the transistor. This structural similarity should allow the density of ferroelectric circuits to evolve rapidly until it catches leading edge processing. Switching at less than 2 volts has been demonstrated on 1000A films3. This wilt allow operation in the planned 3.3 or 2.0 volt supply voltage circuits without special high voltage transistors. Reliability defines the limits of performance of the ferroelectric as with any technology. It has been demonstrated that a ferroelectric film can be switched '1.e12 times and have only a 20To reduction in remanent polarization (Figure 1). Soft errors from alpha partictes are a major factor limiting the reduction of the size of the storage capacitor in
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