The interfacial Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilize homochiral Néel-type domain walls in thin films with perpendicular magnetic anisotropy and as a result permit them to be propagated by a spin Hall torque. In this study, we demonstrate that in Ta/Co 20 Fe 60 B 20 /MgO the DMI may be influenced by annealing. We find that the DMI peaks at D = 0.057 ± 0.003 mJ/m 2 at an annealing temperature of 230 • C. DMI fields were measured using a purely field-driven creep regime domain expansion technique. The DMI field and the anisotropy field follow a similar trend as a function of annealing temperature. We infer that the behavior of the DMI and the anisotropy are related to interfacial crystal ordering and B expulsion out of the CoFeB layer as the annealing temperature is increased.

Antiferromagnetic materials present us with rich and exciting physics, which we can exploit to open new avenues in spintronic device applications. We explore perpendicularly magnetized exchange biased systems of Pt/Co/IrMn and Pt/Co/FeMn, where the crossover from paramagnetic to antiferromagnetic behavior in the IrMn and FeMn layers is accessed by varying the thickness. We demonstrate, through magneto-optical imaging, that the magnetic domain morphology of the ferromagnetic Co layer is influenced by the Néel order of the antiferromagnet (AFM) layers. We relate these variations to the anisotropy energy of the AFM layer and the ferromagnet-antiferromagnet (FM-AFM) inter-layer exchange coupling. We also quantify the interfacial Dzyaloshinskii-Moriya interaction (DMI) in these systems by Brillouin light scattering spectroscopy. The DMI remains unchanged, within experimental uncertainty, for different phases of the AFM layers, which allows us to conclude that the DMI is largely insensitive to both AFM spin order and exchange bias. Understanding such fundamental mechanisms is crucial for the development of future devices employing chiral spin textures, such as Néel domain walls and skyrmions, in FM-AFM heterostructures.