Whispering gallery modes were used for very accurate permittivity and dielectric loss measurements of ultralow loss isotropic and uniaxially anisotropic single crystals. Several materials including sapphire, YAG, quartz, and SrLaAlO4 were measured. The total absolute uncertainty in the real part of permittivity tensor components was estimated to be ±0.1%, limited principally by the uncertainty in sample dimensions. Imaginary parts of permittivities were measured with uncertainties of about 10%, limited by the accuracy of Q-factor measurements of whispering gallery modes. It has been observed that, for most crystals, dielectric losses can be approximated by a power function of absolute temperature only in limited temperature ranges. At temperatures between 4-50 K, losses are often affected by impurities, which are always present in real crystals.
The open-ended coaxial probe with lift-off is studied using a full-wave analysis, and an uncertainty analysis is presented. The field equations for the following terminations are worked out: (1) the sample extends to x in the positive axial direction, (2) the sample is backed by a well-characterized material, and (3) the sample is backed by a short-circuit termination. The equations are valid for both dielectric and magnetic materials. The model allows the study of the open-ended coaxial probe as a nondestructive testing tool. The analysis allows a study of the effects of air gaps on probe measurements. The reflection coefficient and phase are studied as a function of lift-off, coaxial line size, permittivity, permeability, and frequency. Numerical results indicate the probe is very sensitive to lift-off. For medium to high permittivity values and electrically small probes, gapson the order of fractions of a millimeter strongly influence the reflection coefficient. In order for the field to penetrate through the air gap, larger size coaxial line or higher frequencies need to be used. A comparison of the theory to experiment is presented. The results are in close agreement. A differential uncertainty analysis is also included.
The influence of low concentration (1 mol %) Mg doping on the structural, microstructural, surface morphological, and dielectric properties of Ba1−xSrxTiO3 (BST) thin films has been measured and analyzed. The films were fabricated on MgO and Pt–Si substrates via the metalorganic solution deposition technique using carboxylate–alkoxide precursors and postdeposition annealed at 800 °C (film/MgO substrates) and 750 °C (film/Pt–Si substrates). The structure, microstructure, surface morphology, and film/substrate compositional quality were analyzed by glancing angle x-ray diffraction, field emission scanning microscopy, atomic force microscopy, and Auger electron spectroscopy studies. Dielectric properties of unpatterned films were measured at 10 GHz using a coupled, tuned split dielectric resonator system, and at 100 kHz using metal–insulator–metal capacitors. The Mg-doped BST films exhibited improved dielectric and insulating properties compared to the undoped Ba0.6Sr0.4TiO3 thin films. The improved dielectric properties, low leakage current, and good dielectric tunability of the low level Mg-doped BST thin films merits strong potential for utilization in tunable microwave devices.
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