This work aims at developing an electron-beam lithography process for the fabrication of microoptical elements using the negative tone chemically amplified resist SU-8 on Si substrate. A study of the proximity effect parameters α, β and η is carried out to model and control the electron scattering both in the resist and in the substrate, and the SU-8 standard processing conditions are changed to achieve a low contrast process. The determination of the SU-8 / Si proximity effect parameters and its dependence with resist depth is done employing an experimental method and through Monte Carlo simulations. First, α, β and η are obtained comparing exposed patterns calculated by the software PROXY. β, the parameter which measures the backscattering of the electrons by the substrate, is equal to 4µm and the value of η, the ratio of the dose contribution of backscattered electrons to that of the forward scattered (related to α), is 0.7. The extrapolation of exposed patterns data is used to estimate the SUMÁRIO
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.