Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.

We demonstrate controllable and tunable full color light generation through the monolithic integration of blue, green/yellow, and orange/red InGaN nanowire light-emitting diodes (LEDs). Such multi-color nanowire LED arrays are fabricated directly on Si substrate using a three-step selective area molecular beam epitaxy growth process. The lateral-arranged multi-color subpixels enable controlled light mixing at the chip-level and yield color-tunable light emission with CCT values in the range from 1900 K to 6800 K, while maintaining excellent color rendering capability. This work provides a viable approach for achieving micron and nanoscale tunable full-color LED arrays without the compromise between the device efficiency and light quality associated with conventional phosphor-based LEDs.

We have developed AlInGaN quaternary core-shell nanowire heterostructures on Si substrate, wherein an In-rich core and an Al-rich shell were spontaneously formed during the epitaxial growth process. By varying the growth conditions, the emission wavelengths can be tuned from ∼430 nm to ∼630 nm. Such core-shell structures can largely suppress nonradiative surface recombination, leading to a significant enhancement of carrier lifetime from ∼0.2 ns to ∼2 ns. The resulting nanowire light emitting diodes can exhibit an output power exceeding 30 mW for a ∼1 × 1 mm2 non-packaged device at a current density of 100 A/cm2.

Summary Photoelectrochemical CO 2 reduction into syngas (a mixture of CO and H 2 ) provides a promising route to mitigate greenhouse gas emissions and store intermittent solar energy into value-added chemicals. Design of photoelectrode with high energy conversion efficiency and controllable syngas composition is of central importance but remains challenging. Herein, we report a decoupling strategy using dual cocatalysts to tackle the challenge based on joint computational and experimental investigations. Density functional theory calculations indicate the optimization of syngas generation using a combination of fundamentally distinctive catalytic sites. Experimentally, by integrating spatially separated dual cocatalysts of a CO-generating catalyst and a H 2 -generating catalyst with GaN nanowires on planar Si photocathode, we report a record high applied bias photon-to-current efficiency of 1.88% and controllable syngas products with tunable CO/H 2 ratios (0–10) under one-sun illumination. Moreover, unassisted solar CO 2 reduction with a solar-to-syngas efficiency of 0.63% is demonstrated in a tandem photoelectrochemical cell.

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