We have performed 115 In-NMR spectroscopy for Ni 2 InSbO 6 with corundum-related crystal structure to reveal magnetic structures that develop in high magnetic fields. At low fields Ni 2 InSbO 6 shows a helical magnetic order with a long wavelength because of its chiral and polar crystal structure. The field-induced magnetic state was not investigated by microscopic experiment, because an extremely high magnetic field is required to modify the antiferromagnetically coupled helical structure. From the analysis of our 115 In-NMR spectra obtained at high magnetic fields, we confirm that the canted antiferromagnetic structure appears in fields applied in the [110] direction, and the propagation vector of magnetic helix is rotated toward the field direction for fields in the [001] direction. We discuss the effect of a magnetic field that modifies the magnetic structure of an antiferromagnetic chiral magnet.
The photoluminescence (PL) mechanism is discussed for heavily Si‐doped GaAsN, and the evaluation method of electron effective mass (me*) is proposed using its PL peak energy. PL peak energy monotonically decreases as increasing temperature, so the S‐shape characteristic is vanished for this heavily Si‐doped GaAsN as opposed to moderately Si‐doped GaAsN. This result shows that the dominant PL process is an optical transition from the Fermi energy to the top of valence band independent of temperature for this heavily Si‐doped GaAsN, as with degenerate n‐type GaAs. Because PL peak energy is expressed by the sum of bandgap energy, the increased energy of the Burstein–Moss effect, and the decreased energy of the bandgap narrowing, me* is calculated to be 0.098 m0 for this heavily Si‐doped GaAsN with nitrogen composition of 0.6%, where m0 is the electron mass. This result agrees well with previous studies, meaning that the method for estimation of me is effective for dilute GaAsN.
In the originally published article, the following values were presented incorrectly:1) The values of the Si impurity concentration ([Si]) and the electron concentration (n) are slightly erroneous for the heavily Si-doped GaAsN, which are described as 6 × 10 19 cm -3 and 9 × 10 18 cm -3 , respectively. The correct values of them are 2 × 10 19 cm -3 and 6 × 10 18 cm -3 , respectively. Figure 1 and 2 with the correct values are presented below.2) The value of n is applied for the evaluation of electron effective mass (m e * ) in the paper. The correct values of the decreased energy of the bandgap narrowing (ΔE BGN ) and the increased energy of the Burstein-Moss effect (E fn ) are 120 meV and 140 meV instead of 140 meV and 160 meV, respectively. Consequently, for the heavily Si-doped GaAsN, the correct value of m e * is 0.11m 0 instead of 0.098m 0 , where m 0 is the electron mass. Figure 2 with the correct value is presented below. Figure 1. PL spectra of heavily Si-doped GaAsN with [Si] of 2 × 10 19 cm −3 and [N] of 0.6% as a function of temperature. Black arrows indicate PL peak energy on each PL spectrum.
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