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In this paper, we report the results of surface and interface scattering on anomalous Hall effect in Co/Pd multilayers with perpendicular magnetic anisotropy. The surface scattering effect has been extracted from the total anomalous Hall effect. By scaling surface scattering contribution with ρ AH s ∼ ρ γ ss , the exponent γ has been found to decrease with the increase of surface scattering resistivity, which could account for the thickness-dependent anomalous Hall effect. Interface diffusion induced by rapid thermal annealing modifies not only the magnetization and longitudinal resistivity but also the anomalous Hall effect; a large exponent γ ∼ 5.7 has been attributed to interface scattering-dominated anomalous Hall effect.

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We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotateddomain graphene as a result of the proximity effect in the vicinity of the ferromagnetic substrates Co and Ni, using polarised neutron reflectivity (PNR). Although rotated-domain graphene is known to interact weakly with the ferromagnetic underlayer in comparison with the epitaxial graphene, the PNR results indicate an induced magnetic moment of ∼ 0.57 µ B /C atom at 10 K for both structures. The origin of the induced magnetic moment is found to be due to the opening of the graphene's Dirac cone as a result of the strong C p z -3d hybridisation, which was confirmed by additional PNR measurements using a non-magnetic Ni 9 Mo 1 and Cu substrates. We validated our PNR fitting models using the Bayesian uncertainty analysis and corroborated the results by X-ray magnetic circular dichroism measurements.

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We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu3O4, thin films grown on a Si/SiO2 substrate and Si/SiO2/graphene using molecular beam epitaxy. The X-ray diffraction scans show that highly textured crystalline Eu3O4(001) films are grown on both substrates, whereas the film deposited on graphene has a better crystallinity than that grown on the Si/SiO2 substrate. The SQUID measurements show that both films have a Curie temperature of ∼5.5±0.1 K, with a magnetic moment of ∼320 emu/cm3 at 2 K. The mixed valence of the Eu cations has been confirmed by the qualitative analysis of the depth-profile X-ray photoelectron spectroscopy measurements with the Eu2+:Eu3+ ratio of 28:72. However, surprisingly, our films show no metamagnetic behaviour as reported for the bulk and powder form. Furthermore, the microscopic optical images and Raman measurements show that the graphene underlayer remains largely intact after the growth of the Eu3O4 thin films.

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We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD).The XMCD spectra at the C K-edge confirm the presence of a magnetic signal in the graphene layer, and the sum rules give a magnetic moment of up to ∼0.47 μ B /C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of ∼0.41 μ B /C atom at 10 K for epitaxial and rotated-domain graphene. Additional PNR measurements on graphene grown on a nonmagnetic Ni 9 Mo 1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C p z -3d hybridization.