Single-crystal aluminum-gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the (Al(1-x)Ga(x))(2)O(3) alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-thermal-conductivity sapphire substrate and a dominant emission peak in the 1090-1096 nm wavelength range. The peak position is linearly correlated to the unit cell volume, which is dependent on film composition and stress. Varying the Ga-Al alloy composition during growth will enable the fabrication of graded-index layers for tunable lasing wavelengths and low scattering losses at the interfaces.
Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at 1096 nm with an emission cross section of 11.9x10(-19) cm(2), similar to the 1064 nm line of Nd:YVO(4).
Articles you may be interested inEffect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy AIP Advances 4, 027114 (2014); 10.1063/1.4866445Growth model for plasma-assisted molecular beam epitaxy of N-polar and Ga-polar In x Ga 1 − x N Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary IIInitride layers grown by molecular beam epitaxy J. Appl. Phys.Dilute nitride semiconductors of composition GaAs 1−x N x ͑0.0017Ͻ x Ͻ 0.0115͒ are grown by plasma-assisted molecular beam epitaxy with a helical resonator plasma source for active nitrogen. The plasma source is self-starting at the operating pressure and can be operated at two different frequencies for which the emission spectrum is dominated by N 2 molecules or by N atoms. For the same power the molecular-rich mode is found to produce a higher flux of active nitrogen. After extended operation the plasma tube becomes contaminated with As which reduces the flux of active nitrogen and creates a below band gap emission band in the photoluminescence of the GaAs 1−x N x . For the clean discharge tube no difference is observed in the photoluminescence for samples grown in the molecule-rich or atom-rich mode.
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