A new band gap profile (exponential profile) for the active layer of the a-SiGe:H single junction solar cell deposited by plasma enhanced CVD (PECVD) has been designed and experimentally demonstrated. In this work we study the difference between the experimental results and the computer simulation. Using Rutherford Backscattering Spectrometry (RBS) significant differences were found between the composition profile as expected from variations in the gas phase ratio GeH4/SiH4 during the deposition and the actual Ge/Si depth profile as determined by RBS. This has important implications for the design of bandgap-graded a-SiGe:H cells. Among others, a delayed response of the plasma conditions due to the changes in the GeH4 flow is studied.
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