Synthesis of ultrasmall metal-organic framework (MOF) nanoparticles has been widely recognized as a promising route to greatly enhance their properties but remains a considerable challenge. Herein, we report one facile and effective spatially confined thermal pulverization strategy to successfully transform bulk Co-MOF particles into sub-5 nm nanocrystals encapsulated within N-doped carbon/graphene (NC/G) by using conducting polymer coated Co-MOFs/graphene oxide as precursors. This strategy involves a feasible mechanism: calcination of Co-MOFs at proper temperature in air induces the partial thermal collapse/distortion of the framework, while the uniform coating of a conducting polymer can significantly improve the decomposition temperature and maintain the component stability of Co-MOFs, thus leading to the pulverization of bulk Co-MOF particles into ultrasmall nanocrystals without oxidation. The pulverization of Co-MOFs significantly increases the contact area between Co-MOFs with electrolyte and shortens the electron and ion transport pathway. Therefore, the sub-5 nm ultrasmall MOF nanocrystals-based composites deliver an ultrahigh reversible capacity (1301 mAh g at 0.1 A g), extraordinary rate performance (494 mAh g at 40 A g), and outstanding cycling stability (98.6% capacity retention at 10 A g after 2000 cycles), which is the best performance achieved in all reported MOF-based anodes for lithium-ion batteries.
Zinc oxide thin films have been obtained on bare and GaN buffer layer decorated Si (111) substrates by pulsed laser deposition (PLD), respectively. GaN buffer layer was achieved by a two-step method. The structure, surface morphology, composition, and optical properties of these thin films were investigated by X-ray diffraction, field emission scanning electron microscopy, infrared absorption spectra, and photoluminiscence (PL) spectra, respectively. Scanning electron microscopy images indicate that the flower-like grains were presented on the surface of ZnO thin films grown on GaN/Si (111) substrate, while the ZnO thin films grown on Si (111) substrate show the morphology of inclination column. PL spectrum reveals that the ultraviolet emission efficiency of ZnO thin film on GaN buffer layer is high, and the defect emission of ZnO thin film derived from Zni and Vo is low. The results demonstrate that the existence of GaN buffer layer can greatly improve the ZnO thin film on the Si (111) substrate by PLD techniques.
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