The in situ binding of tin oxide (SnO 2 ) nanoparticles (SNp) and graphene nanosheets (GNs) that synthesized simultaneously in single-step atmospheric-pressure processing was achieved at a low temperature by employing in-liquid plasma in a solution of tin chloride (SnCl 2 •2H 2 O) in ethanol as the only precursor. Transmission electron microscopy, Raman analysis, and X-ray diffraction revealed the composite (SNp/GNs) synthesis with SNp of sizes 2−3 nm, which were distributed uniformly and attached to both sides of the GNs. The SNp/GNs composite synthesis was provided by the simple, low-cost, singleprocessing method of the in-liquid plasma for future gas-sensing and lithium-ion battery applications.
The tin oxide (SnO 2 )-graphene composite was synthesized by the in-liquid plasma method using SnO 2 nanoparticles (average diameter ~30 nm) dispersed ethanol as a precursor without providing external heat. As observed from scanning electron microscopy (SEM) and transmission electron microscopy (TEM), the SnO 2 nanoparticles were distributed uniformly on flaky graphene sheets. The formation of SnO 2 and high crystalline graphene was supported by the Raman analysis and x-ray diffraction (XRD) studies. A facile, low-cost method operating at atmospheric pressure based on the in-liquid plasma technology can be utilized to fabricate SnO 2 -graphene composite using minimum precursors for future applications such as gas sensing devices and fuel cells.
Control of the bonding structure in carbon materials is achieved by a post-treatment of atmospheric pressure plasma (APP) for magnetronsputtered carbon films. The APP post-treatment changes the films morphologically owing to the removal and modification of sp 2 bonds on the basis of the near edge X-ray absorption fine structure analysis of sp 2 contents. By APP post-treatment, the resulting changes in surface and bulk properties modify the optical and electrical properties of the carbon films. The control of the film properties can be utilized for various applications, such as gas sensors and solar cells.
A novel route to achieve an ideal plasma-enhanced atomic layer etching of silicon dioxide with self-limiting deposition and area-selective feature over silicon nitride is demonstrated in this work using a silane coupling agent and argon plasma. While monitoring the film thickness of silicon dioxide, self-limiting characteristics in both modification and etching steps are attained. Moreover, the dosing step revealed the selective formation of a modification layer on the oxide over the nitride film. In situ infrared spectroscopy results suggest the surface functionalization of the hydroxyl terminal groups of the oxide with the silane coupling agent to form the self-limiting modification layer at a relatively low substrate temperature. Compared to the previously reported fluorocarbon precursors, a higher etch yield for SiO2 was calculated, showing a promising option to meet the increasing demands in semiconductor production.
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