Nanolaminates consisting of Al2O3 and TiO2 oxide sublayers were synthesized by using atomic layer deposition to produce individual layers with atomic scale thickness control. The sublayer thicknesses were kept constant for each multilayer structure, and were changed from 50 to 0.2 nm for a series of different samples. Giant dielectric constant (∼1000) was observed when the sublayer thickness is less than 0.5 nm, which is significantly larger than that of Al2O3 and TiO2 dielectrics. Detailed investigation revealed that the observed giant dielectric constant is originated from the Maxwell–Wagner type dielectric relaxation.

Dielectric materials exhibiting high dielectric constants play critical roles in a wide range of applications from microchip energy storage embedded capacitors for implantable biomedical devices to energy storage capacitors for a new generation of renewable energy generation/storage systems. Instead of searching for new materials, we demonstrate that giant dielectric constants can be achieved by integrating two simple oxides with low dielectric constants into nanolaminate structures. In addition, the obtained dielectric constant values are highly tunable by manipulating the sub-layer thicknesses of the component oxides to control the number of interfaces and oxygen redistribution. The work reported here opens a new pathway for the design and development of high dielectric constant materials based on the nanolaminate concept.

A high speed variation of Scanning Probe Microscopy with continuous image rates on the order of 1 frame per second is applied to investigate the nucleation and growth of individual ferroelectric domains. Movies of consecutive images directly identify nascent domains and their nucleation times, while tracking their development with time and voltage reveals linear domain growth at lateral velocities near 1 mm/s, even faster for nascent domains. Nanoscale maps of nucleation times and growth velocities indicate that domain nucleation and growth are uncorrelated, varying extensively with position. Domain switching dynamics do strongly couple to film defects; for instance, grain boundaries can profoundly pin domain walls, and polarization reversal kinetics are influenced by strain fields near microcracks or in asymmetric specimens. The influence of the onset of switching fatigue is observed as well. These results highlight the importance of updating classical interpretations of ferroelectric switching for truly rigorous models of polarization dynamics. Coupling high speed SPM imaging with in situ activation by voltage or other parameters therefore provides an important methodology to research dynamic surface properties with nanoscale resolution, extendable to a range of materials such as photovoltaics,