The property of self-imaging combined with the polarization birefringence of the angled multimode waveguide is used to design a silicon nitride (SiN) polarization splitter (PS) at λ ∼ 1550 nm. The demonstrated PS on a 450 nm thick SiN device layer (with 2.5 µm cladding oxide) has a footprint of 80 µm×13 µm and exhibits nearly wavelength independent performance over the C+L bands. Also, the device can be configured as a polarization combiner (PC) in reverse direction with similar bandwidth and performance. The measured crosstalk (CT) and insertion loss (IL) are respectively <−18 dB (<−20 dB) and ∼0.7 dB (∼0.8 dB) for TE (TM) polarization over the measurement wavelength range of 1525 nm ≤λ ≤ 1625 nm. The measured device parameter variations suggest some tolerance to fabrication variations. Such a device is a good candidate for a photonics integrated chip (PIC) foundry-compatible, SiN PS.
We designed and simulated an electro-optic quantum frequency transducer based on coupled micro-disk resonators with conversion rate exceeding 7.35 kHz and footprint below 60 × 120µm2. The con-version efficiency can be increased to 13% with optimized design.
We experimentally demonstrate a SiN angled-MMI based polarization splitter with nearly wavelength-independent performance over C+L bands, insertion loss « 0.8 dB (1.0 dB), and crosstalk < —18 dB (< -20 dB) for TE (TM) polarization.
We employ a silicon nitride microdisk resonator to observe the transient dynamics of photoexcited carriers in multi-layer and few-layer MoS2 exfoliated flakes.
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