We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (≈-0.22 meV/MPa) leads to variable tuning of exciton energies (+18 to -0.9 μeV/MPa) under tensile stress. Modest tuning of the permanent dipole, Coulomb interaction and fine-structure splitting energies is also measured. We exploit the variable exciton response to tune multiple quantum dots on the same chip into resonance.

A key ingredient for quantum photonic technologies is an on-demand source of indistinguishable single photons. State-of-the-art indistinguishable single-photon sources typically employ resonant excitation pulses with fixed repetition rates, creating a string of single photons with predetermined arrival times. However, in future applications, an independent electronic signal from a larger quantum circuit or network will trigger the generation of an indistinguishable photon. Further, operating the photon source up to the limit imposed by its lifetime is desirable. Here, we report on the application of a true on-demand approach in which we can electronically trigger the precise arrival time of a single photon as well as control the excitation pulse duration based on resonance fluorescence from a single InAs/GaAs quantum dot. We investigate in detail the effect of the finite duration of an excitation $\pi$ pulse on the degree of photon antibunching. Finally, we demonstrate that highly indistinguishable single photons can be generated using this on-demand approach, enabling maximum flexibility for future applications

We report on multicolor excitation experiments with color centers in hexagonal boron nitride at cryogenic temperatures. We demonstrate controllable optical switching between bright and dark states of color centers emitting around 2 eV. Resonant, or quasi-resonant, excitation of photoluminescence also pumps the color center, via a two-photon process, into a dark state, where it becomes trapped. Repumping back into the bright state has a step-like spectrum with a defect-dependent threshold between 2.25 and 2.6 eV. This behavior is consistent with photoionization and charging between optically bright and dark states of the defect. Furthermore, a second zero phonon line, detuned by +0.4 eV, is observed in absorption with orthogonal polarization to the emission, evidencing an additional energy level in the color center.

We report optically detected magnetic resonance (ODMR) measurements of an ensemble of spin-1 negatively charged boron vacancies in hexagonal boron nitride. The photoluminescence decay rates are spin-dependent, with intersystem crossing rates of 1.02 ns–1 and 2.03 ns–1 for the m S = 0 and m S = ±1 states, respectively. Time gating the photoluminescence enhances the ODMR contrast by discriminating between different decay rates. This is particularly effective for detecting the spin of the optically excited state, where a zero-field splitting of |D ES | = 2.09 GHz is measured. The magnetic field dependence of the photoluminescence exhibits dips corresponding to the ground (GSLAC) and excited-state (ESLAC) anticrossings and additional anticrossings due to coupling with nearby spin-1/2 parasitic impurities. Comparison to a model suggests that the anticrossings are mediated by the interaction with nuclear spins and allows an estimate of the ratio of the singlet to triplet spin-dependent relaxation rates of κ0/κ1 = 0.34.

In a charge tunable device, we investigate the fine structure splitting of neutral excitons in single long-wavelength (1.1µm < λ < 1.3 µm) InGaAs quantum dots as a function of external uniaxial strain. Nominal fine structure splittings between 16 and 136 µeV are measured and manipulated.We observe varied response of the splitting to the external strain, including positive and negative tuning slopes, different tuning ranges, and linear and parabolic dependencies, indicating that these physical parameters depend strongly on the unique microscopic structure of the individual quantum dot. To better understand the experimental results, we apply a phenomenological model describing the exciton polarization and fine-structure splitting under uniaxial strain. The model predicts that, with an increased experimental strain tuning range, the fine-structure can be effectively canceled for select telecom wavelength dots using uniaxial strain. These results are promising for the generation of on-demand entangled photon pairs at telecom wavelengths. † Electronic address: l.sapienza@soton.ac.uk ‡ Electronic address: b.d.gerardot@hw.ac.uk