Spectroscopic ellipsometry is a widely used optical technique in both industry and research for determining the optical properties and thickness of thin films. The effective use of spectroscopic ellipsometry on micro-structures is inhibited by technical limitations on the lateral resolution and data acquisition rate. Here, we introduce a spectroscopic micro-ellipsometer (SME), capable of recording spectrally resolved ellipsometric data simultaneously at multiple angles of incidence in a single measurement of a few seconds, with a lateral resolution down to 2 μm in the visible spectral range. The SME can be easily integrated into generic optical microscopes by the addition of a few standard optical components. We demonstrate complex refractive index and thickness measurements by using the SME, which are in excellent agreement with a commercial spectroscopic ellipsometer. The high lateral resolution is displayed by complex refractive index and thickness maps over micron-scale areas. As an application for its accuracy and high lateral resolution, the SME can characterize the optical properties and number of layers of exfoliated transition-metal dichalcogenides and graphene, for structures that are a few microns in size.
As performance of van der Waals heterostructure devices is governed by the nanoscale thicknesses and homogeneity of their constituent mono-to few-layer flakes, accurate mapping of these properties with high lateral resolution becomes imperative. Spectroscopic ellipsometry is a promising optical technique for such atomically thin-film characterization due to its simplicity, noninvasive nature and high accuracy. However, the effective use of standard ellipsometry methods on exfoliated micron-scale flakes is inhibited by their tens-of-microns lateral resolution or slow data acquisition. In this work, we demonstrate a Fourier imaging spectroscopic micro-ellipsometry method with sub-5 μm lateral resolution and three orders-of-magnitude faster data acquisition than similar-resolution ellipsometers. Simultaneous recording of spectroscopic ellipsometry information at multiple angles results in a highly sensitive system, which is used for performing angstrom-level accurate and consistent thickness mapping on exfoliated mono-, bi-and trilayers of graphene, hexagonal boron nitride (hBN) and transition metal dichalcogenide (MoS 2 , WS 2 , MoSe 2 , WSe 2 ) flakes. The system can successfully identify highly transparent monolayer hBN, a challenging proposition for other characterization tools. The optical microscope integrated ellipsometer can also map minute thickness variations over a micron-scale flake, revealing its lateral inhomogeneity. The prospect of adding standard optical elements to augment generic optical imaging and spectroscopy setups with accurate in situ ellipsometric mapping capability presents potential opportunities for investigation of exfoliated 2D materials.
Spectroscopic ellipsometry is a widely used optical technique both in industry and research for determining the optical properties and thickness of thin films. The effective use of spectroscopic ellipsometry on micro-structures is inhibited by technical limitations on lateral resolution and data acquisition rate. Here we introduce a spectroscopic micro-ellipsometer (SME), capable of measuring spectrally resolved ellipsometric data at many angles of incidence in a single-shot with a lateral resolution down to 2 microns. The SME can be easily integrated into generic optical microscopes by addition of a few stock optics. We demonstrate complex refractive index and thickness measurements by the SME which are in excellent agreement with a commercial spectroscopic ellipsometer. As an application for its accuracy and high lateral resolution, the SME can characterize the optical properties and number of layers of exfoliated transition-metal dichalcogenides and graphene, for structures that are a few microns in size.
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