Plasmonic nanostructures with electrical connections have potential applications as new electro-optic devices due to their strong light–matter interactions. Plasmonic dimers with nanogaps between adjacent nanostructures are especially good at enhancing local electromagnetic (EM) fields at resonance for improved performance. In this study, we use optical extinction measurements and high-resolution electron microscopy imaging to investigate the thermal stability of electrically interconnected plasmonic dimers and their optical and morphological properties. Experimental measurements and finite difference time domain (FDTD) simulations are combined to characterize temperature effects on the plasmonic properties of large arrays of Au nanostructures on glass substrates. Experiments show continuous blue shifts of extinction peaks for heating up to 210°C. Microscopy measurements reveal these peak shifts are due to morphological changes that shrink nanorods and increase nanogap distances. Simulations of the nanostructures before and after heating find good agreement with experiments. Results show that plasmonic properties are maintained after thermal processing, but peak shifts need to be considered for device design.
Glancing Angle Deposition (GLAD) technique has been used to fabricate the Ag nanoparticles (NPs) over TiO2 thin film (TF) on the n-Si substrate. The deposited Ag NPs are in the size of 3–5 nm. Open-air annealing has been done at 500 °C and 600 °C for
the n-Si/TiO2 TF/Ag NP samples. High Resolution X-ray Diffraction (HRXRD) peaks were identified to calculate the crystalline size of the NPs and rutile phase of the annealed sample were exhibited. Morphological analysis has been done for the sample using Field Emission Scanning
Electron Microscopy (FESEM), Energy Dispersive Spectroscopy (EDS) and Atomic Force Microscopy (AFM). The enhancement of plasmonic absorption and modulation in the bandgap for the annealed Ag NPs surrounded TiO2 TF has been verified by UV-Vis Spectroscopy and the bandgap has been
calculated using Tauc plot. An overall 2.5 fold and 3 fold enhancement has been observed in the UV region and visible region for n-Si/TiO2 TF/Ag NP annealed at 500 °C and 600 °C samples as compared to the n-Si/TiO2 TF/Ag NP as-deposited samples.
The modulation of bandgap due to the sub-band transition and Localized Surface Plasmon Resonance (LSPR) effect of Ag NPs and relevant sub-band transition due to change in annealing temperature has been reported.
Glancing angle deposition (GLAD) oriented electron beam (e-beam) evaporation process has been employed to develop 1D In2O3 nanorod array over n-Si substrate. The morphology of as-deposited In2O3 thin film (∼70 nm) and GLAD 1D In2O3
nanorod array (∼400 nm) were explored using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS) and high resolution transmission electron microscopy (HRTEM) analysis. The structural analysis were perceived by high-resolution X-ray diffraction (HRXRD)
and atomic force microscopy (AFM) techniques. The clampdown of ∼4.4 fold photoluminescence (PL) emission intensity was observed for In2O3 nanorod array. Metallization were done to measure the current (I)–voltage (V) characteristics for n-Si/In2O3
thin film and n-Si/In2O3 nanorod devices. The In2O3 nanorod device displayed ∼2.2 fold enhancement in current conduction at −4.6 V and an averagely ∼1.1 fold augmentation in photosensitivity were also observed. The photoresponsivity
of ∼28 μA/W, maximum specific detectivity of ∼9.9×107 Jones and low NEP of ∼4.5×10−12 W/√Hz was achieved for the In2O3 nanorod-based photodetectors. The maximum ∼2.5 fold high detectivity and ∼2.4
fold low noise equivalent power (NEP) were perceived for the 1D In2O3 nanorod array detector as compared to the bare In2O3 thin film detector.
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