The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperatureinduced sign inversion of NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of temperature-induced shift in the chemical potential indicating a direct correlation of NLHE with the electronic structure at the Fermi surface. Finally, the roomtemperature NLHE in TaIrTe4 is exploited to demonstrate the wireless RF rectification with zero external bias and magnetic field. This work opens a door to realizing room temperature applications based on the NLHE in Weyl semimetals.

The β phase of Ta is known to exhibit higher spin Hall efficiency compared to other heavy metals such as Pt. However, the larger resistivity of β-phase Ta leads to higher power consumption for spin–orbit torque (SOT)-based devices. In this work, we measure the efficiency of damping-like torque and field-like torque in Ni80Fe20/Ta using spin-torque ferromagnetic resonance technique. We report a larger damping-like torque efficiency of −(0.52 ± 0.01) for Ni80Fe20/Ta with low-resistive mixed (α + β)-phase Ta, which is about 40% larger compared to β-phase Ta. The field-like torque efficiency is found to be lower (by ≈400%) and of opposite sign compared to β-phase Ta. The estimated power consumption is found to be lower in the mixed-phase Ta system compared to the β-phase Ta as well as some Pt-based systems. Using micromagnetic simulations, we show that the measured values of damping-like torque and field-like torque for mixed-phase Ta lead to improved device performance, namely, (i) a lower switching time in a nanopillar-based SOT device and (ii) improved phase noise in a nanoconstriction-based spin Hall nano-oscillator.

The frequency noise spectrum of a magnetic tunnel junction based spin torque oscillator is examined where multiple modes and mode-hopping events are observed. The frequency noise spectrum is found to consist of both white noise and 1/f frequency noise. We find a systematic and similar dependence of both white noise and 1/f frequency noise on bias current and the relative angle between the reference and free layers, which changes the effective damping and hence the mode-hopping behavior in this system. The frequency at which the 1/f frequency noise changes to white noise increases as the free layer is aligned away from the anti-parallel orientation w.r.t the reference layer. These results indicate that the origin of 1/f frequency noise is related to mode-hopping, which produces both white noise as well as 1/f frequency noise similar to the case of ring lasers.

The mutual synchronization of spin-torque oscillators (STOs) is critical for communication, energy harvesting and neuromorphic applications. Short range magnetic coupling-based synchronization has spatial restrictions (few µm), whereas the long-range electrical synchronization using vortex STOs has limited frequency responses in hundreds MHz (<500 MHz), restricting them for on-chip GHz-range applications. Here, we demonstrate electrical synchronization of four non-vortex uniformly-magnetized STOs using a single common current source in both parallel and series configurations at 2.4 GHz band, resolving the frequency-area quandary for designing STO based on-chip communication systems. Under injection locking, synchronized STOs demonstrate an excellent time-domain stability and substantially improved phase noise performance. By integrating the electrically connected eight STOs, we demonstrate the battery-free energy-harvesting system by utilizing the wireless radio-frequency energy to power electronic devices such as LEDs. Our results highlight the significance of electrical topology (series vs. parallel) while designing an on-chip STOs system.

Spintronics has been recently extended to neuromorphic computing because of its energy efficiency and scalability. However, a biorealistic spintronic neuron with probabilistic “spiking” and a spontaneous reset functionality has not been demonstrated yet. Here, we propose a biorealistic spintronic neuron device based on the heavy metal (HM)/ferromagnet (FM)/antiferromagnet (AFM) spin–orbit torque (SOT) heterostructure. The spintronic neuron can autoreset itself after firing due to the exchange bias of the AFM. The firing process is inherently stochastic because of the competition between the SOT and AFM pinning effects. We also implement a restricted Boltzmann machine (RBM) and stochastic integration multilayer perceptron (SI-MLP) using our proposed neuron. Despite the bit-width limitation, the proposed spintronic model can achieve an accuracy of 97.38% in pattern recognition, which is even higher than the baseline accuracy (96.47%). Our results offer a spintronic device solution to emulate biologically realistic spiking neurons.