X-ray photoemission spectroscopy was used to analyze the oxide grown at low temperature on AuxSi1−x films. It was found that the oxide is stoichiometric SiO2, but is structurally distinct from oxides grown on Si at high temperatures (950 °C). Also, unoxidized Au-Si atom inclusions were observed in the oxide. The composition of the inclusions is dependent on the initial bulk AuxSi1−x composition.
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