High thermoelectric performance is generally achieved through either electronic structure modulations or phonon scattering enhancements, which often counteract each other. A leap in performance requires innovative strategies that simultaneously optimize electronic and phonon transports. We demonstrate high thermoelectric performance with a near room-temperature figure of merit, ZT ~ 1.5, and a maximum ZT ~ 2.6 at 573 kelvin, by optimizing atomic disorder in cadmium-doped polycrystalline silver antimony telluride (AgSbTe2). Cadmium doping in AgSbTe2 enhances cationic ordering, which simultaneously improves electronic properties by tuning disorder-induced localization of electronic states and reduces lattice thermal conductivity through spontaneous formation of nanoscale (~2 to 4 nanometers) superstructures and coupling of soft vibrations localized within ~1 nanometer around cadmium sites with local strain modulation. The strategy is applicable to most other thermoelectric materials that exhibit inherent atomic disorder.

Tailoring local structural distortions and the associated ferroelectric instability in SnTe via Ge alloying resulted in ultralow lattice thermal conductivity which boosts zT to 1.6 at 721 K.

Successful applications of a thermoelectric material require simultaneous development of compatible n-and p-type counterparts. While the thermoelectric performance of p-type GeTe has been improved tremendously in recent years, it has been a challenge to find a compatible n-type GeTe counterpart due to the prevalence of intrinsic Ge vacancies. Herein, we have shown that alloying of AgBiSe 2 with GeTe results in an intriguing evolution in its crystal and electronic structures, resulting in n-type thermoelectric properties. We have demonstrated that the ambient rhombohedral structure of pristine GeTe transforms into cubic phase in (GeTe) 100−x (AgBiSe 2 ) x for x ≥ 25, with concurrent change from its p-type electronic character to n-type character in electronic transport properties. Such change in structural and electronic properties is confirmed from the nonmonotonic variation of band gap, unit cell volume, electrical conductivity, and Seebeck coefficient, all of which show an inflection point around x ∼ 20, as well as from the temperature variations of synchrotron powder X-ray diffractions and differential scanning calorimetry. First-principles density functional theoretical (DFT) calculations explain that the shift toward n-type electronic character with increasing AgBiSe 2 concentration arises due to increasing contribution of Bi p orbitals in the conduction band edge of (GeTe) 100−x (AgBiSe 2 ) x . This cubic n-type phase has promising thermoelectric properties with a band gap of ∼0.25 eV and ultralow lattice thermal conductivity that ranges between 0.3 and 0.6 W/mK. Further, we have shown that (GeTe) 100−x (AgBiSe 2 ) x has promising thermoelectric performance in the mid-temperature range (400−500 K) with maximum thermoelectric figure of merit, zT, reaching ∼1.3 in p-type (GeTe) 80 (AgBiSe 2 ) 20 at 467 K and ∼0.6 in n-type (GeTe) 50 (AgBiSe 2 ) 50 at 500 K.

The orthorhombic phase of GeSe, a structural analogue of layered SnSe (space group: Pnma), has recently attracted attention after a theoretical prediction of high thermoelectric figure of merit, zT > 2. The experimental realization of such high performance in orthorhombic GeSe, however, is still elusive (zT ≈ 0.2). The rhombohedral phase of GeSe, a structural analogue of GeTe (space group: R3m), previously stabilized at high pressure (2 GPa) and high temperature (1600 K), is promising due to its theoretically predicted ferro­electric instability and the higher earth abundance of Se compared to Te. Here, we demonstrate high thermoelectric performance in the rhombohedral crystals of GeSe, which is stabilized at ambient conditions by alloying with 10 mol % AgBiSe2. We show ultralow lattice thermal conductivity (κL) of 0.74–0.47 W/mK in the 300–723 K range and high zT ≈ 1.25 at 723 K in the p-type rhombohedral (GeSe)0.9­(AgBiSe2)0.1 crystals grown using Bridgman method. First-principles density functional theoretical analysis reveals its vicinity to a ferro­electric instability which generates large anomalous Born effective charges and strong coupling of low energy polar optical phonons with acoustic phonons. The presence of soft optical phonons and incipient ferro­electric instability in (GeSe)0.9­(AgBiSe2)0.1 are directly evident in the low temperature heat capacity (C p) and switching spectroscopy piezoresponse force microscopy (SS-PFM) experiments, respectively. Effective scattering of heat carrying acoustic phonons by ferro­electric instability induced soft transverse optical phonons significantly reduces the κL and enhances the thermoelectric performance in rhombohedral (GeSe)0.9­(AgBiSe2)0.1 crystals.