The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In.

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Anderson localization is a predominant phenomenon in condensed matter and materials physics. In fact, localized and delocalized states often co-exist in one material. They are separated by a boundary called the mobility edge. Mott transition may take place between these two regimes. However, it is widely recognized that an apparent demonstration of Anderson localization or Mott transition is a challenging task. In this article, we present a direct optical observation of a transition of radiative recombination dominant channels from delocalized (i.e., local extended) states to Anderson localized states in the GaInP base layer of a GaInP/GaAs single junction solar cell by the means of the variable-temperature electroluminescence (EL) technique. It is found that by increasing temperature, we can boost a remarkable transition of radiative recombination dominant channels from the delocalized states to the localized states. The delocalized states are induced by the local atomic ordering domains (InP/GaP monolayer superlattices) while the localized states are caused by random distribution of indium (gallium) content. The efficient transfer and thermal redistribution of carriers between the two kinds of electronic states was revealed to result in both a distinct EL mechanism transition and an electrical resistance evolution with temperature. Our study gives rise to a self-consistent precise picture for carrier localization and transfer in a GaInP alloy, which is an extremely technologically important energy material for fabricating high-efficiency photovoltaic devices.