In this paper we present measurements of both the quantumand transport mobility in two populated subbands of a Si-d-doped GaAs structure. In these structures it is expected that ionized impurity scattering is the main scattering mechanism at low temperature. We investigated this by measuring both the transport and quantum mobility. We observe that both mobilities are independent of temperature between 1.2 and 4.2 K and find a ratio of the transport to quantum mobility of typically 2-3 in both populated subbands. Both results confirm the dominant role of ionized impurity scattering in Si-d-doped GaAs at low temperatures,
A unique sample was prepared on a Cu(100) single crystal, consisting of three Co layers separated by two Cu layers in the form of wedges oriented perpendicular to each other: Cu(100)/80 Å Co/Cu wedge A/30 Å Co/Cu wedge B/30 Å Co/7 Å Cu/30 Å Au. Position-sensitive magneto-optical Kerr effect measurements along Cu wedge B, at a fixed position on Cu wedge A corresponding to maximum antiferromagnetic (AF) coupling, enabled us to investigate not only the AF but also the ferromagnetic (F) coupling between the two 30 Å Co layers as a function of the Cu thickness. The measurements confirmed both long and short period coupling oscillations in the AF regime, and revealed the predicted extension of the short period through the F regime.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.