DuPont investigated an X7R BaTiOs based buried thick film capacitor material, K E (1200,1600). Capacitor construction methodology is established utilizing various combinations of conductor, high dielectric constant (K) capacitor dielectric, and multilayer insulating dielectric materials. The electrical pelformance of material sets were characterized by capacitance, dissipation factor, insulation resistance, and temperature change in capacitance. Reliability was ascertained by break down voltage, capacitive decay, thermal cycling, voltage bias, HHBT(huinidity, voltage bias, and temperature), and capacitance refire stability. In general, for the material sets studied both low insulation resistance(< IO9 0) and high dissipation factor(df > 5%) are positively correlated with low break down voltage(< 600 V ) and can be used as predictors of reliability failure. A new parameter, the reliability quotient, correlates break down voltage with capacitance, dissipation factor, and insulation resistance. The optimum materials sets and assembly procedure for reliability and capacitive pe$ormance are described.
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