Infrared absorption, free carrier density, and transmission electron microscopy measurements have been correlated for n-type Si-doped GaAs samples with 1 • 10 is cm-~ < [Si] < 5 X 1019 cm -3. The infrared absorption of the localized vibrational modes was measured after the samples were compensated by e-irradiation or by 6Li saturation diffusion. Comparisons of the results of the two compensation methods indicate that: (i) the Li-native defect acceptor complex is responsible in large part for the compensation after a 750~ Li diffusion; (ii) the degree of the Si site transfer from Ga to As lattice sites as a result of the Li saturation diffusion at 950~ is a function of [Si] and the Li-native defect donor is probably responsible for this transfer; * Electrochemical Society Active Member.
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