Our study shows that the isolation—degradation in semi—insulating GaAs substrate is closely related to dry—processes during the device fabrication. It was found that EL2, the major electron trap in undoped LEC semiinsulating GaAs, could be passivated by plasma—assisted etchings or depositions. The passivation of EL2 causessurface leakage and leads to crosstalk in GaAs ICs.
to yield practical etch rates and good reproducibility. The significantly higher A10.16Ga0.s4As etch rates using stainless steel holders vs. Teflon holders appear to be caused by a galvanic action similar to the oxidation action found in heated peroxide by Schwartz and Sundburg (5).
ConclusionsThe pH controlled P/A etch yields practical etch rates, good selectivity, and reproducibility. The speed of the etch and selectivity, however, are dependent on the pH of the solution. A possible galvanic action is thought to account for the enhanced A10.1aGa0.s4As etch rate using stainless steel relative to Teflon sample holders. More experiments are needed to elucidate this behavior.Publication costs of this article were assisted by Motorola Incorporated.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 155.33.16.124
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