Expressions are derived for specified magnetoresistance and magneto-conductivity coefficients for n-type Ge with an array of parallel dislocations. The obtained equations are compared with measurements a t 77 O K on plastically bent n-type Ge. From the results we conclude that the electron mobility is not reduced by the dislocations for Ndw. <2 x lo7 cm-2.The observed anisotropies in the conductivity can be attributed to the inhomogeneous distribution of the dislocations.Es werden Ausdrucke fur bestimmte Magnetowiderstands-und Magnetoleitfiihigkeitakoeffizienten von n-leitendem Ge mit einer Anordnung paralleler Versetzungen abgeleitet. Die erhaltenen Gleichungen werden mit MeSergebnissen an plastisch gebogenem, n-leitendem Ge bei 77 O K verglichen. Aus den Ergebnissen wird geschlossen, da13 die Elektronenbeweglichkeit durch die Versetzungen nicht verkleinert wird, solange N&,l. < 2 x lo7 cm-2 ist. Beobachtete Anisotropien der Leitfiihigkeit konnen der inhomogenen Verteilung der Versetzungen zugeschrieben werden.
with an edge oomponent, introduced in n-type semioonductors, can have an influenoe on t h e eleotron mobility due t o t h e spaoe oharge surrounding them (1). The model of Read (2) ( e l a s t i c c o l l i s i o n of oonduction e l e c t r o n s with a smooth boundary of t h e space oharge oylinder) implies that t h e r e is no e f f e o t on the m o b i l i t y for current flow p a r a l l e l t o t h e dislooations. This is oonfirmed by experiments o f Logan (3) on germanium bent p l a s t i c a l l y about t h e [211] d i r e o t i o n at 800 '0. Broudy (4) who bent germanium about t h e [ I I O ] direct i o n at 550 OC found a deoreased " p a r a l l e l " mobility.
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