Various analytical techniques (dcfert etching, optical niicroscopy, X-ray topography (SRT), catliodolmninescence (CL)) were combined to get information about the real structure of 811and 8-doped LEC-InP. The &pits, produced by the HuBER-etch, were n o t only caused by niicrotkfects, as it was described in literature. V'e found a correlation between S p i t s and special types of dislocations.T'crschiedcnc Xnalyseverfahren (Tlefektatien, Rdntgentopographie, Kathodolumines-Lenz inicl Lichtmikroskopie) wurden kornhiniert, uiii AufschlulS uher die Kealstruktur von 811und 8-dotierten LEC-InP zu erhalten. Uurch HUBER-AtzUng ermugte S-Gruben wurden iiicht nur von Mikrodefekten verursacht, wio bisher angenonimen. Es murde eine Zuordnung von S-Gruben LU hesti~iimten Versetzungstypen gefuntlen.
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