The syntheses and comprehensive characterization of 14 organic semiconductors based on perylene bisimide (PBI) dyes that are equipped with up to four halogen substituents in the bay area of the perylene core and five different highly fluorinated imide substituents are described. The influence of the substituents on the LUMO level and the solid state packing of PBIs was examined by cyclic voltammetry and single crystal structure analyses of seven PBI derivatives, respectively. Top-contact/bottom-gate organic thin film transistor (OTFT) devices were constructed by vacuum deposition of these PBIs on SiO(2) gate dielectrics that had been pretreated with n-octadecyl triethoxysilane in vapor phase (OTS-V) or solution phase (OTS-S). The electrical characterization of all devices was accomplished in a nitrogen atmosphere as well as in air, and the structural features of thin films were explored by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM). Several of those PBIs that bear only hydrogen or up to two fluorine substitutents at the concomitantly flat PBI core afforded excellent n-channel transistors, in particular, on OTS-S substrate and even in air (mu > 0.5 cm(2) V(-1) s(-1); I(on)/I(off) > 10(6)). The best OTFTs were obtained for 2,2,3,3,4,4,4-heptafluorobutyl-substituted PBI 1a ("PTCDI-C4F7") on OTS-S with n-channel field effect mobilities consistently >1 cm(2) V(-1) s(-1) and on-to-off current rations of 10(6) in a nitrogen atmosphere and in air. For distorted core-tetrahalogenated (fluorine, chlorine, or bromine) PBIs, less advantageous solid state packing properties were found and high performance OTFTs were obtained from only one tetrachlorinated derivative (2d on OTS-S). The excellent on-to-off current modulation combined with high mobility in air makes these PBIs suitable for a wide range of practical applications.

The thin-film transistor characteristics of n-channel organic semiconductor, N,N′-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene tetracarboxylic diimide, are described. The slip-stacked face-to-face molecular packing allows a very dense parallel arrangement of the molecules, leading to field-effect mobility as high as 0.72cm2V−1s−1. The mobility only slightly decreased after exposure to air and remained stable for more than 50days. Our results reveal that molecular packing effects such as close stacking of perylene diimide units and segregation effects imparted by the fluorinated side chains are crucial for the air stability.

No abstract

Core‐chlorinated naphthalene tetracarboxylic diimides (NDIs) with fluoroalkyl chains are synthesized and employed for n‐channel organic thin‐film transistors (OTFTs). Structural analyses of the single crystals and thin films are performed and their charge‐transport behavior is investigated in terms of structure–property relationships. NDIs with two chlorine substituents are shown to exhibit a herringbone structure with a very close π‐plane distance (3.3–3.4 Å), a large π‐stack overlap (slipping angle ca. 62°), and high crystal densities (2.046–2.091 g cm−3). These features result in excellent field‐effect mobilities of up to 1.43 cm2 V−1 s−1 with minimal hysteresis and high on–off ratios (ca. 107) in air. This is similar to the highest n‐channel mobilities in air reported so far. Despite the repulsive interactions of bulky Cl substituents, tetrachlorinated NDIs adopt a slip‐stacked face‐to‐face packing with an interplanar distance of around 3.4 Å, resulting in a high mobility (up to 0.44 cm2 V−1 s−1). The air‐stability of dichlorinated NDIs is superior to that of tetrachlorinated NDIs, despite of their higher LUMO levels. This is closely related to the denser packing of the fluorocarbon chains of dichlorinated NDIs, which serves as a kinetic barrier to the diffusion of ambient oxidants. Interestingly, these NDIs show an optimal performance either on bare SiO2 or on octadecyltrimethoxysilane (OTS)‐treated SiO2, depending on the carbon number of the fluoroalkyl chains. Their synthetic simplicity and processing versatility combined with their high performance make these semiconductors highly promising for practical applications in flexible electronics.

No abstract

We study electron transport across a carbon molecular junction consisting of a C 60 molecule sandwiched between two semi-infinite metallic carbon nanotubes. It is shown that the Landauer conductance of this carbon hybrid system can be tuned within orders of magnitude not only by varying the tube-C 60 distance, but more importantly at fixed distances by ͑i͒ changing the orientation of the Buckminsterfullerene or ͑ii͒ rotating one of the tubes around its cylinder axis. Furthermore, it is explicitly shown that structural relaxation determines qualitatively the transmission spectrum of such devices.

A general formalism is presented that treats selfconsistently and simultaneously classical atomic motion and quantum electronic excitations in dynamical processes of atomic many-body systems (non-adiabatic quantum molecular dynamics). On the basis of time-dependent density functional theory, coupled highly non-linear equations of motion are derived for arbitrary basis sets for the time-dependent Kohn-Sham orbitals. Possible approximations to make the approach practical for large atomic cluster systems are discussed. As a first application of the still exact equations of motion, non-adiabatic effects in the scattering of H + +H, as a case study, are investigated.

The first observation of the Z boson decaying to four leptons in proton-proton collisions is presented. The analyzed data set corresponds to an integrated luminosity of 5.02 fb −1 at √ s = 7 TeV collected by the CMS detector at the Large Hadron Collider. A pronounced resonance peak, with a statistical significance of 9.7 σ, is observed in the distribution of the invariant mass of four leptons (electrons and/or muons) with mass and width consistent with expectations for Z boson decays. The branching fraction and cross section reported here are defined by phase space restrictions on the leptons, namely, 80 < m 4 < 100 GeV, where m 4 is the invariant mass of the four leptons, and m > 4 GeV for all pairs of leptons, where m is the two-lepton invariant mass. The measured branching fraction is B(Z → 4 ) = 4.2