Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant (κ) and interface traps were determined. An amorphous SiO2 layer was found at the MgO∕Si interface as a result of subcutaneous Si oxidation. κ for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO∕Si were found to be comparable with SiO2∕Si, rendering MgO competitive with all presently considered high-κ dielectrics.

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Articles you may be interested inWire-bar coating of semiconducting polythiophene/insulating polyethylene blend thin films for organic transistors J. Appl. Phys. 110, 093523 (2011); 10.1063/1.3660779 Improving organic thin-film transistor performance by nanoimprint-induced chain ordering Dual input AND gate fabricated from a single channel poly(3-hexylthiophene) thin film field effect transistor

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Articles you may be interested inThe effect of electroactive interlayer on the ferroelectric properties in poly(vinylidene fluoride-trifluoroethylene) copolymer ultrathin films J. Appl. Phys. 112, 074111 (2012); 10.1063/1.4757936 Intermolecular interactions and high dielectric energy storage density in poly(vinylidene fluoridehexafluoropropylene)/poly(vinylidene fluoride) blend thin films Appl. Phys. Lett. 100, 252907 (2012); 10.1063/1.4730603 Low-voltage-operated top-gate polymer thin-film transistors with high capacitance poly(vinylidene fluoridetrifluoroethylene)/poly(methyl methacrylate) dielectrics Influence of the relative humidity on the properties of ferroelectric poly(vinylidene fluoride-trifluoroethylene)Structural evolution and dielectric relaxation behavior of electron-irradiated poly(vinylidene fluoride-trifluoroethylene) 80/20 mol% copolymers Spin cast films of poly͑vinylidene fluoride-trifluoroethylene͒ ͓P͑VDF-TrFE͔͒ copolymer deposited on bare Si and SiO 2 coated Si substrates were vacuum annealed and treated in supercritical carbon dioxide ͑scCO 2 ͒ and the dielectric properties of the films before and after treatments were studied using capacitance-voltage and conductance-voltage techniques on thin film capacitor structures. After annealing, the static dielectric constant ͑K͒ for P͑VDF-TrFE͒ was found to be more than double that for SiO 2 films and to increase with film thickness and annealing time, and reached a maximum of nearly 10 for thick films on SiO 2 or Si substrates. Treating annealed P͑VDF-TrFE͒ films in scCO 2 initially decreased K and the refractive index n to as-deposited values that increased and stabilized after reannealing. The changes in P͑VDF-TrFE͒ were attributed to densification and ordering. No systematic differences in interface charges and states were found between treated and untreated samples and with various substrates. The leakage current for P͑VDF-TrFE͒ films was found to be higher than that for SiO 2 .

New naphthalenetetracarboxylic diimide derivative based thin film organic transistors (OTFTs) have been fabricated on a variety of dielectrics: SiO2, polyethylene, and polyvinylidene fluoride trifluoroethylene. Resulting inverted gate OTFTs were found to be p channel with Au contacts. In situ annealing studies revealed densification and significant mobility improvement. The mobility of as-deposited films was around 10−4cm2V−1s−1 for the best material and this could be improved by two orders of magnitude by a judicious annealing regimen and using a low static dielectric constant material for the gate dielectric.