Fast and accurate examination from the bulk to the specific area of the defect in advanced semiconductor devices is critical in failure analysis. This work presents the use of Ar ion milling methods in combination with Ga focused ion beam (FIB) milling as a cutting-edge sample preparation technique from the bulk to specific areas by FIB lift-out without sample-preparation-induced artifacts. The result is an accurately delayered sample from which electron-transparent TEM specimens of less than 15 nm are obtained.
With the introduction of new materials, new device structures, and shrinking device dimensions, failure mechanisms evolve, which can make identifying defects challenging. Therefore, an accurate and controllable delayering process to target defects is desirable. We present a workflow comprised of bulk device delayering by broad Ar ion beam milling, plan view specimen preparation by focused ion beam tool, followed by site-specific delayering by concentrated Ar ion beam milling. The result is an accurately delayered device, without sample preparation-induced artifacts, that is suitable for uncovering defects during physical failure analysis.
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