The dynamic range is one of the most important figures of merit of SIMS measurements and equipment. The term refers to the concentration range of an analysed elementits concentration being high oear the surface but decreasing with increasing deptb-that can be measured by depth profiling. The state of the art is such that, under favourable conditiol~s, 5-6 orders of magnitude are possible (measured on ion-implanted boron in silicon). It is shown that with special sample preparation techniques (removal of the sputter crater environment) the dynamic range can be extended to 7 orders of magnitude. Experimental details of the preparative methods are given together with a critical evaluation of the methods.
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