The standard SPICE Gummel-Poon model for bipolar transistors in the case of current crowding is inaccurate at high frequencies primarily due to the position of the capacitances. An improved distributed bipolar transistor model is developed, with fractions of both the depletion and the diffusion capacitances placed outside the base spreading resistance and the transistor junctions. The model is contrasted with the standard model by comparing the high frequency characteristics for an HBT.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.