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An anomalous enhanced diffusion is observed when As-implanted Si samples are exposed to rapid heating (∼ seconds) from room temperature to temperatures exceeding 1000 °C. This diffusion can be characterized by a low activation energy of ∼1.8 eV and is active during a very short time (≲ 1 s) probably during the rapid heating up of the sample.

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The ion implantation perturbed angular correlation technique was used to measure y-ray angular distributio ns from the decay of the first -(2+) and second (4*) states of even Nd and Sm nuclei recoiled into polarized iron. These data and the results of previous measurements give values of H = 2.4t0.3 MOe for H (NdFe),