Dielectric measurements have been carried out on all-organic metal-insulator-semiconductor structures with the ferroelectric polymer poly(vinylidenefluoride-trifluoroethylene) as the gate insulator. It is shown that the polarization states remain stable after poling with accumulation and depletion voltage. However, negative charge trapped at the semiconductor-insulator interface during the depletion cycle masks the negative shift in flatband voltage expected during the sweep to accumulation voltages.

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Organic based FeFETs have been studied using current voltage measurements. Evidence is presented supporting the idea that, during the application of a sequence of poling cycles, electrons become permanently fixed at the insulator/semiconductor interface probably trapped on the positively charged surfaces of ferroelectrically polarized poly(vi nylidenefluoride-trifluoroethylene) (P(VDF-TrFE» crystalites at the interface.

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