At present for analysis of the homogeneity of materials properties are becoming widely used various modifications of a scanning Kelvin probe. These methods allow mapping the spatial distribution of the electrostatic potential. Analysis of the electropotential profile is not sufficient to describe any specific physical parameters of the polymer nanocomposites. Therefore, we use an external energy impact, such as light. Purpose of paper is the modification of the Kelvin scanning probe and the conduct of experimental studies of the spatial distribution and response of the electrostatic potential of the actual polymer nanocomposites to the optical probing.Carried out the investigations on experimental Low density polyethylene composites. Carbon nanomaterials and nanoparticles of silicon dioxide or aluminum as fillers are used. As a result, maps of the spatial distribution of the electrostatic potential relative values and the surface photovoltage. Statistical analysis of the electrophysical and photoelectric properties homogeneity, depending on the component composition of the composites carried out. In addition, with reference to matrix polymers, the Kelvin scanning probe, in combination with the optical probing, made it possible to detect a piezoelectric effect. The latter, can used as a basis for the development of new methods for studying the mechanical properties of matrix polymers.
The features of photovoltaic cells with their own photoconductivity in semiconductors with deep-level multiply-charge impurity have been considered. The use of such structures can significantly extend the dynamic range of sensitivity and gain new functional properties of single-element photoelectric receivers. Photovoltaic converters based on semiconductors with deep-level multiply-charge acceptor type impurity enable devices with a wider functionality, whereas the structure with multiply-charge donor type impurity has better linearity of energy performance. In the development of photoelectric receiver with advanced functionality features the model of recombination processes in multiply-charge impurity in a wide range of optical radiation power density has been used. Streszczenie. W pracy przedstawiono właściwości fotoelektrycznych przetworników z samoistną foto przewodnością na bazie półprzewodników z głęboką wieloładunkową domieszką. Wykorzystanie takich struktur pozwala w sposób istotny rozszerzyć zakres dynamicznej czułości i otrzymać nowe funkcjonalne właściwości fotodetektorów. Przetworniki fotoelektryczne na bazie półprzewodników z głęboką wieloładunkową domieszką typu akceptorowego pozwalją zbudować urządzenia o szerszej funkcjonalności, a struktury z wieloładunkową domieszką typu donorowego mają lepszą liniowość charakterystyki energetycznej. Przy projektowaniu foto odbiorników z rozszerzonymi funkcjonalnymi możliwościami wykorzystano model rekombinacyjnych procesów na wieloładunkowej domieszce w szerokiej skali gęstości mocy promieniowania optycznego. (Kontrolowanie charakterystyk przetworników fotowoltaicznych w oparciu o półprzewodniki
Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm).Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.
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