The method of GaAs film growth from a solution between two substrates was considered.
The calculated thickness as a function of growth temperature and distance between substrates was in a good agreement with experimental results.
The investigation of the film roughness as a function of cooling rate, distance between substrates and their orientations was fulfilled.
Electrical properties of the films as a function of substrate orientations in the interval (100)–(111)–(011) were demonstrated. The possibility of application of this method for the investigation of film doping as a function of temperature and growth rate was shown.
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