Articles you may be interested inTemperature-dependent infrared dielectric functions of MgO crystal: An ellipsometry and first-principles molecular dynamics study Growth temperature dependence of the magnetic and structural properties of epitaxial Fe layers on MgO (001) High-quality MgO thin films deposited on Si( 111) substrates by atomic layer growth (ALG) are formed by a hydrolysis surface reaction of Mg(C,HS), and H20. The growth orientation of MgO changes from ( 111) to ( 100)) when the temperature of the silicon substrate changes from 600 to 900 "C. The growth orientation difference of MgO grown by ALG is rationalized in terms of the surface diffusion coefficients on MgO.

No abstract

No abstract

No abstract

Cerium dioxide (CeO 2 ) cap layers for high temperature superconducting coated conductors were fabricated on yttria-stabilized zirconia (YSZ) single crystal substrates via the unbalanced radio frequency (RF) magnetron sputtering method. YBa 2 Cu 3 O 7− (YBCO) films were epitaxially deposited on the as-grown CeO 2 /YSZ (001) stacks using water-free metal organic deposition (MOD) method. The surface morphology evolution of CeO 2 cap layers could be tuned by adjusting the sputtering pressure, from smooth and uniformly granular, to rough and composed of spindle-like islands. According to the atomic force microscopy (AFM) data, a monotonic relationship could be found between the root mean squared (RMS) roughness value and flat area fraction. The critical current density (J c ) of the MOD-YBCO film varied significantly along with the CeO 2 morphology evolution, caused by the degradation of YBCO film's epitaxial growth. It was found that the as-grown CeO 2 cap layer deposited at 0.5 Pa could serve as a favorable template and did not require post-modification, on which YBCO film with J c of 1.92 MA/cm 2 (77 K, self-field) could be obtained. The MOD process would be improved in our future study by parameter optimization to enhance the J c property of YBCO films.