The carbon additions in the pressureless sintering of S i c are commonly used for the removal of SiO, layers on the starting powders. In practice, it is common to add more C than is necessary ,for stoichiometric removal to ensure a complete deoxidution. A s a result, inclusions of excess free C are a general feature of the microstructure of sintered S i c . This phenomenon was studied by high-resolution Auger electron spectroscopy on ultrahigh -va cu um -exp osed f r u ct u r e su rfaces as well us by high-resolution transmission electron microscopy oj B -and C-doped materials. [ K e y words: silicon carbide, carbon. sintering, inclusions, boron.]
Non‐oxide ceramics, for example aluminum nitride, silicon carbide, and silicon nitride, are ideal materials for applications under high thermal and mechanical stress. The synthetic methods including liquid‐phase sintering processes, the microstructures of the resulting materials (figure shows Si3N4 from powder produced using the diimide route), and some aspects of the characteization and application of the materials are discussed. magnified image
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.